pnp silicon planar medium power high gain transistor issue 2 ? april 94 features * 25 volt v ceo * gain of 200 at i c =2 amps * very low saturation voltage applications * darlington replacement * battery powered circuits * motor drivers absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -25 v collector-emitter voltage v ceo -25 v emitter-base voltage v ebo -5 v peak pulse current i cm -8 a continuous collector current i c -3 a practical power dissipation* p totp 1.5 w power dissipation at t amb =25c derate above 25c p tot 1 5.7 w mw/c operating and storage temperature range t j :t stg -55 to +200 c *the power which can be dissipated assuming the device is mounted in a typical manner on a p.c.b. with copper equal to 1 inch square minimum electrical characteristics (at t amb = 25c) parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -25 v i c =-100 m a collector-emitter breakdown voltage v (br)ceo -25 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -5 v i e =-100 m a collector cut-off current i cbo -0.1 m a v cb =-15v emitter cut-off current i ebo -0.1 m a v eb =-4v collector-emitter saturation voltage v ce(sat) -0.25 -0.45 -0.5 v v v i c =-1a, i b =-10ma* i c =-2a, i b =-20ma* i c =-3a, i b =-100ma* base-emitter saturation voltage v be(sat) -1.0 v i c =-1a, i b =-10ma* base-emitter turn-on voltage v be(on) -0.8 v ic=-1a, v ce =-2v* static forward current transfer ratio h fe 300 250 200 100 800 i c =-10ma, v ce =-2v i c =-1a, v ce =-2v* i c =-2a, v ce =-2v* i c =-6a, v ce =-2v* e-line to92 compatible ZTX789A 3-276 c b e electrical characteristics (at t amb = 25c) parameter symbol min. typ. max. unit conditions. transition frequency f t 100 mhz i c =-50ma, v ce =-5v f=50mhz input capacitance c ibo 225 pf v eb =-0.5v, f=1mhz output capacitance c obo 25 pf v cb =-10v, f=1mhz switching times t on t off 35 400 ns ns i c =-500ma, i b1 =-50ma i b2 =-50ma, v cc =-10v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% thermal characteristics parameter symbol max. unit thermal resistance: junction to ambient 1 junction to ambient 2 junction to case r th(j-amb)1 r th(j-amb)2 ? r th(j-case) 175 116 70 c/w c/w c/w ? device mounted on p.c.b. with copper equal to 1 sq. inch minimum. ZTX789A -40 0.0001 derating curve t -temperature (c) m ax po we r d issipati o n - ( w a tts) maximum transient thermal impedance pulse width (seconds) thermal resistance (c/w) 10 100 1 0.1 0.01 -20 0 20 40 60 80 100 120 200 180 160 140 0.001 0 100 200 d=0.2 d=0.1 single pulse d=0.5 t 1 t p d=t 1 /t p 1.0 0.5 2.0 1.5 case temperature 2.5 ambient temperat ure 0 d=1 (d.c.) 3-277
pnp silicon planar medium power high gain transistor issue 2 ? april 94 features * 25 volt v ceo * gain of 200 at i c =2 amps * very low saturation voltage applications * darlington replacement * battery powered circuits * motor drivers absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -25 v collector-emitter voltage v ceo -25 v emitter-base voltage v ebo -5 v peak pulse current i cm -8 a continuous collector current i c -3 a practical power dissipation* p totp 1.5 w power dissipation at t amb =25c derate above 25c p tot 1 5.7 w mw/c operating and storage temperature range t j :t stg -55 to +200 c *the power which can be dissipated assuming the device is mounted in a typical manner on a p.c.b. with copper equal to 1 inch square minimum electrical characteristics (at t amb = 25c) parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -25 v i c =-100 m a collector-emitter breakdown voltage v (br)ceo -25 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -5 v i e =-100 m a collector cut-off current i cbo -0.1 m a v cb =-15v emitter cut-off current i ebo -0.1 m a v eb =-4v collector-emitter saturation voltage v ce(sat) -0.25 -0.45 -0.5 v v v i c =-1a, i b =-10ma* i c =-2a, i b =-20ma* i c =-3a, i b =-100ma* base-emitter saturation voltage v be(sat) -1.0 v i c =-1a, i b =-10ma* base-emitter turn-on voltage v be(on) -0.8 v ic=-1a, v ce =-2v* static forward current transfer ratio h fe 300 250 200 100 800 i c =-10ma, v ce =-2v i c =-1a, v ce =-2v* i c =-2a, v ce =-2v* i c =-6a, v ce =-2v* e-line to92 compatible ZTX789A 3-276 c b e electrical characteristics (at t amb = 25c) parameter symbol min. typ. max. unit conditions. transition frequency f t 100 mhz i c =-50ma, v ce =-5v f=50mhz input capacitance c ibo 225 pf v eb =-0.5v, f=1mhz output capacitance c obo 25 pf v cb =-10v, f=1mhz switching times t on t off 35 400 ns ns i c =-500ma, i b1 =-50ma i b2 =-50ma, v cc =-10v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% thermal characteristics parameter symbol max. unit thermal resistance: junction to ambient 1 junction to ambient 2 junction to case r th(j-amb)1 r th(j-amb)2 ? r th(j-case) 175 116 70 c/w c/w c/w ? device mounted on p.c.b. with copper equal to 1 sq. inch minimum. ZTX789A -40 0.0001 derating curve t -temperature (c) m ax po we r d issipati o n - ( w a tts) maximum transient thermal impedance pulse width (seconds) thermal resistance (c/w) 10 100 1 0.1 0.01 -20 0 20 40 60 80 100 120 200 180 160 140 0.001 0 100 200 d=0.2 d=0.1 single pulse d=0.5 t 1 t p d=t 1 /t p 1.0 0.5 2.0 1.5 case temperature 2.5 ambient temperat ure 0 d=1 (d.c.) 3-277
d.c. 1s 100ms 10ms 1.0ms 0.1ms 0.01 0.1 1 10 0.8 0.6 0 1.6 0.01 0.1 1 10 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 typical characteristics v ce(sat) v i c i c - collector current (amps) v ce (sa t ) - (v olts) v ce(sat) v i c i c - collector current (amps) v c e (sat) - ( v olts) i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h f e - n o r mal ise d gain v be - (v olts) i c - co l le c to r cur r e nt ( am ps) 750 500 250 h fe - t ypi c a l ga i n v ce - collector voltage (volts) safe operating area 0.1 100 1 10 0.01 0.1 1 10 single pulse test at t amb =25c t amb =25c -55c +25c +100c +175c 0 0 v ce =2v 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 v b e (sat) - (v olts) -55c +25c +100c +175c i c /i b =100 i c /i b =10 i c /i b =100 i c /i b =40 1.8 1.4 1.2 1.0 0.4 0.2 i c /i b =100 -55c +25c +100c v ce =2v 0.8 0.6 0 1.6 1.8 1.4 1.2 1.0 0.4 0.2 +100c +25c -55c ZTX789A 3-278
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